R1LV0216BSB-7SI#B0
IC SRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation offers the R1LV0216BSB-7SI-B0, a 2Mbit Parallel SRAM memory IC. This high-speed memory component features an access time of 70 ns and a write cycle time of 70 ns, ensuring efficient data retrieval and manipulation. The memory organization is 128K x 16, providing ample capacity for demanding applications. Designed for surface mounting, it is housed in a 44-TSOP II package with a 0.400" width. Operating within a voltage range of 2.7V to 3.6V, this volatile memory component is suitable for operation across an extended temperature range from -40°C to 85°C. The R1LV0216BSB-7SI-B0 is commonly utilized in industrial automation, automotive systems, and consumer electronics due to its reliable performance and robust specifications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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