R1LV0216BSB-5SI#S0
IC SRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0216BSB-5SI-S0 is a 2Mbit parallel SRAM memory component. This device features a 55 ns access time and a memory organization of 128K x 16, operating with a volatile memory type. The R1LV0216BSB-5SI-S0 utilizes a parallel interface and is supplied in a 44-TSOP II package, designed for surface mount applications. Its operating voltage range is 2.7V to 3.6V, with a word/page write cycle time of 55 ns. This component is suitable for applications in industrial and automotive sectors, including control systems and infotainment. The R1LV0216BSB-5SI-S0 is supplied in Tape & Reel packaging and operates within an ambient temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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