R1LV0216BSB-5SI#B1
IC SRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0216BSB-5SI-B1 is a 2Mbit volatile SRAM memory component featuring a parallel interface. This device offers an access time of 55 ns and a write cycle time of 55 ns, organized as 128K x 16. It operates from a supply voltage range of 2.7V to 3.6V and is specified for an ambient temperature range of -40°C to 85°C. The R1LV0216BSB-5SI-B1 is supplied in a 44-TSOP II package with a 400 mil width, designed for surface mount applications. This component is suitable for use in industrial and consumer electronics applications requiring fast, non-volatile data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
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