R1LV0108ESN-7SR#B0
IC SRAM 1MBIT PARALLEL 32SOPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0108ESN-7SR-B0 is a 1Mbit parallel SRAM memory device. This component features a memory organization of 128K x 8 and offers an access time of 70 ns. The R1LV0108ESN-7SR-B0 operates with a supply voltage range of 2.7V to 3.6V and a word/page write cycle time of 70 ns. It is housed in a 32-SOIC package with a 0.450" (11.40mm) width, designed for surface mounting. The operating temperature range for this volatile memory is from 0°C to 70°C. This SRAM is commonly utilized in industrial automation, consumer electronics, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-SOIC (0.450"", 11.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-SOP |
| Write Cycle Time - Word, Page | 70ns |
| Memory Interface | Parallel |
| Access Time | 70 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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