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R1LV0108ESN-5SR#B0

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R1LV0108ESN-5SR#B0

IC SRAM 1MBIT PARALLEL 32SOP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

The Renesas Electronics Corporation R1LV0108ESN-5SR-B0 is a 1Mbit parallel SRAM memory IC. This component offers a 55 ns access time and a memory organization of 128K x 8. Designed for surface mount applications, it is housed in a 32-SOIC package with a 0.450" width. The R1LV0108ESN-5SR-B0 operates within a voltage supply range of 2.7V to 3.6V and has a write cycle time of 55 ns. This volatile memory component is suitable for use in various industrial and consumer electronics applications where fast, reliable data storage is required. It is supplied in tube packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case32-SOIC (0.450"", 11.40mm Width)
Mounting TypeSurface Mount
Memory Size1Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package32-SOP
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization128K x 8
ProgrammableNot Verified

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