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R1LV0108ESN-5SI#S1

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R1LV0108ESN-5SI#S1

IC SRAM 1MBIT PARALLEL 32SOP

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's R1LV0108ESN-5SI-S1 is a high-speed 1Mbit parallel Static Random-Access Memory (SRAM) device. Featuring a memory organization of 128K x 8, this component offers a rapid access time of 55 ns. The R1LV0108ESN-5SI-S1 operates within a supply voltage range of 2.7V to 3.6V and is designed for surface mount applications. Its robust construction ensures reliable performance across an operating temperature range of -40°C to 85°C. Packaged in a 32-SOIC (0.450" width) format, it is supplied on tape and reel for high-volume manufacturing. This memory solution is suitable for applications requiring fast data access, including industrial automation, telecommunications, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case32-SOIC (0.450"", 11.40mm Width)
Mounting TypeSurface Mount
Memory Size1Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package32-SOP
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization128K x 8
ProgrammableNot Verified

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