R1LV0108ESN-5SI#B0
IC SRAM 1MBIT PARALLEL 32SOPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0108ESN-5SI-B0 is a 1Mbit parallel SRAM memory integrated circuit. This component offers a fast 55 ns access time and a write cycle time of 55 ns. The memory organization is 128K x 8, providing a total density of 1 Megabit. Designed for surface mounting, it is supplied in a 32-SOIC package with a standard width of 11.40mm. The operating voltage range is 2.7V to 3.6V, and it operates within an industrial temperature range of -40°C to 85°C. This SRAM is suitable for applications in industrial automation, consumer electronics, and telecommunications. The device is packaged in a tube for efficient handling and integration into manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 32-SOIC (0.450"", 11.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-SOP |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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