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R1LV0108ESF-5SR#B0

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R1LV0108ESF-5SR#B0

IC SRAM 1MBIT PARALLEL 32TSOP I

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation R1LV0108ESF-5SR-B0 is a 1Mbit parallel SRAM memory integrated circuit. This component features a 128K x 8 memory organization and a fast access time of 55 ns, with a corresponding write cycle time. Operating with a supply voltage range of 2.7V to 3.6V, it is housed in a compact 32-TSOP I package suitable for surface mounting. The operating temperature range for this memory IC is 0°C to 70°C. Applications for this device are found in various sectors including industrial automation, consumer electronics, and communication systems requiring reliable and efficient volatile memory solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case32-TFSOP (0.724"", 18.40mm Width)
Mounting TypeSurface Mount
Memory Size1Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologySRAM
Memory FormatSRAM
Supplier Device Package32-TSOP I
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization128K x 8
ProgrammableNot Verified

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