R1LV0108ESF-5SI#B0
IC SRAM 1MBIT PARALLEL 32TSOP IManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LV0108ESF-5SI-B0 is a 1Mbit parallel SRAM memory component. This device offers an access time of 55 ns and a write cycle time of 55 ns, facilitating efficient data operations. The memory is organized as 128K x 8, providing a standard configuration for various applications. Operating within a voltage range of 2.7V to 3.6V, this component is built for reliable performance across its specified temperature range of -40°C to 85°C. The surface mountable 32-TSOP I package is suitable for high-density board designs. This SRAM is commonly utilized in industrial automation, automotive systems, and consumer electronics where fast, volatile memory is required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-TSOP I |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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