R1LP0408DSB-5SR#B0
IC SRAM 4MBIT PARALLEL 32TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation R1LP0408DSB-5SR-B0 is a 4Mbit parallel SRAM memory device. Featuring a memory organization of 512K x 8, this component offers a maximum access time of 55 ns, ensuring rapid data retrieval. The device operates within a supply voltage range of 4.5V to 5.5V and has a write cycle time of 55 ns. Packaged in a 32-TSOP II format for surface mounting, it is suitable for applications requiring high-speed volatile memory. This SRAM is commonly utilized in industrial automation, telecommunications infrastructure, and consumer electronics sectors where reliable and fast memory solutions are critical. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-SOIC (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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