R1LP0408DSB-5SI#B1
IC SRAM 4MBIT PARALLEL 32TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation R1LP0408DSB-5SI-B1 is a 4Mbit parallel SRAM memory component. Featuring a 512K x 8 memory organization, this volatile memory device offers a 55 ns access time and a 55 ns write cycle time. It operates with a supply voltage ranging from 4.5V to 5.5V and is designed for surface mounting. The R1LP0408DSB-5SI-B1 is housed in a 32-TSOP II package and is rated for an operating temperature range of -40°C to 85°C. This component is suitable for applications requiring high-speed data storage in industries such as telecommunications and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-SOIC (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
71V016SA20PHGI
IC SRAM 1MBIT PARALLEL 44TSOP II
IDT71T75602S200PFGI8
IC SRAM 18MBIT PARALLEL 100TQFP
7025L55JI
IC SRAM 128KBIT PARALLEL 84PLCC
