R1LP0408DSB-5SI#B0
IC SRAM 4MBIT PARALLEL 32TSOP IIManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1LP0408DSB-5SI-B0 is a 4Mbit parallel SRAM memory component. This volatile memory device features a memory organization of 512K x 8 and a fast access time of 55 nanoseconds. Operating within a voltage supply range of 4.5V to 5.5V, it offers a write cycle time of 55ns. The R1LP0408DSB-5SI-B0 is packaged in a 32-TSOP II format suitable for surface mount applications, with an operating temperature range of -40°C to 85°C. This component finds application in various industrial sectors requiring high-speed data buffering and storage.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 32-SOIC (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM |
| Memory Format | SRAM |
| Supplier Device Package | 32-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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