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R1EV58256BTDRBI#B2

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R1EV58256BTDRBI#B2

IC EEPROM 256KBIT PAR 32TSOP I

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation R1EV58256BTDRBI-B2, a 256Kbit EEPROM memory IC, offers parallel interface access with an 85 ns access time. This non-volatile memory features a 32K x 8 organization and operates across a voltage range of 2.7V to 5.5V. Packaged in a 32-TSOP I (32-TFSOP) surface mount configuration, it is specified for operation between -40°C and 85°C. The write cycle time for word or page operations is 10ms. This component is suitable for applications in industrial automation, automotive systems, and consumer electronics requiring reliable data storage.

Additional Information

Series: R1EV58256BxxRRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / Case32-TFSOP (0.488"", 12.40mm Width)
Mounting TypeSurface Mount
Memory Size256Kbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 5.5V
TechnologyEEPROM
Memory FormatEEPROM
Supplier Device Package32-TSOP I
Write Cycle Time - Word, Page10ms
Memory InterfaceParallel
Access Time85 ns
Memory Organization32K x 8
ProgrammableNot Verified

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