R1EV58256BTCNBI#B2
IC EEPROM 256KBIT PAR 28TSOP IManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's R1EV58256BTCNBI-B2 is a 256Kbit Parallel EEPROM memory component from the R1EV58256BxxN series. This non-volatile memory device features an 85 ns access time and is organized as 32K x 8. Operating with a supply voltage range of 2.7V to 5.5V, it offers robust performance across a wide industrial temperature range of -40°C to 85°C. The component is packaged in a 28-TSOP I (Thin Small Outline Package) for surface mounting. Applications for this memory IC include industrial control systems, automotive electronics, and consumer electronics, where reliable data storage is critical. The write cycle time for a word or page is 10ms.
Additional Information
Series: R1EV58256BxxNRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 28-TSSOP (0.465"", 11.80mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 28-TSOP I |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 85 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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