R1EV58256BSCNBI#B2
IC EEPROM 256KBIT PARALLEL 28SOPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1EV58256BSCNBI-B2 is a 256Kbit parallel EEPROM memory IC from the R1EV58256BxxN series. This non-volatile memory offers an access time of 85 ns and a memory organization of 32K x 8. Designed for surface mounting, it is available in a 28-SOP package (28-SOIC, 0.330" width). The device operates within a voltage range of 2.7V to 5.5V and has a word/page write cycle time of 10ms. This component is suitable for applications in industrial, automotive, and consumer electronics sectors requiring reliable non-volatile data storage. It is supplied in trays.
Additional Information
Series: R1EV58256BxxNRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 28-SOIC (0.330"", 8.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 28-SOP |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 85 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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