R1EV58256BDANBI#B2
IC EEPROM 256KBIT PARALLEL 28DIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1EV58256BDANBI-B2 is a 256Kbit parallel EEPROM memory integrated circuit from the R1EV58256BxxN series. This non-volatile memory features an 85 ns access time and a 32K x 8 organization. The device operates with a supply voltage range of 2.7V to 5.5V and has a word/page write cycle time of 10ms. Packaged in a 28-DIP (0.600" width) for through-hole mounting, this component is suitable for applications operating within an ambient temperature range of -40°C to 85°C. It is commonly utilized in industrial automation, automotive systems, and consumer electronics.
Additional Information
Series: R1EV58256BxxNRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 28-DIP (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 256Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 28-DIP |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 85 ns |
| Memory Organization | 32K x 8 |
| Programmable | Not Verified |
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