R1EV58064BDARBI#B2
IC EEPROM 64KBIT PARALLEL 28DIPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1EV58064BxxR series 64Kbit parallel EEPROM memory IC, part number R1EV58064BDARBI-B2. This non-volatile memory device offers a 100 ns access time and an 8K x 8 memory organization. Designed for through-hole mounting, it utilizes a 28-DIP (0.600"", 15.24mm) package. The R1EV58064BDARBI-B2 operates within a voltage supply range of 2.7V to 5.5V and features a word/page write cycle time of 10ms. Its robust design and operating temperature range of -40°C to 85°C (TA) make it suitable for applications in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: R1EV58064BxxRRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 28-DIP (0.600"", 15.24mm) |
| Mounting Type | Through Hole |
| Memory Size | 64Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 28-DIP |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 8K x 8 |
| Programmable | Not Verified |
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