R1EV5801MBTDRDI#B0
IC EEPROM 1MBIT PAR 32TSOP IManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1EV5801MB series EEPROM memory IC, part number R1EV5801MBTDRDI-B0, offers 1Mbit of non-volatile parallel interface memory. This device features a 128K x 8 organization and a maximum access time of 150 ns. Operating within a voltage range of 2.7V to 5.5V, it is suitable for applications requiring reliable data storage. The R1EV5801MBTDRDI-B0 is housed in a 32-TSOP I surface mount package and operates across an industrial temperature range of -40°C to 85°C. This memory solution is commonly utilized in automotive, industrial automation, and consumer electronics sectors. The write cycle time for word or page operations is 10ms.
Additional Information
Series: R1EV5801MBRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-TFSOP (0.488"", 12.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 32-TSOP I |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 150 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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