R1EV5801MBSDRDI#B0
IC EEPROM 1MBIT PARALLEL 32SOPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation R1EV5801MB parallel EEPROM memory, part number R1EV5801MBSDRDI-B0, offers 1Mbit of non-volatile storage organized as 128K x 8. Featuring a fast 150 ns access time, this component is suitable for applications requiring efficient data retrieval. The device operates within a voltage range of 2.7V to 5.5V and supports a surface mount configuration in a 32-SOP (32-SOIC) package. Its operating temperature range is -40°C to 85°C. This EEPROM technology is commonly employed in industrial automation, automotive systems, and consumer electronics where reliable data retention is critical. The write cycle time for a word or page is 10ms.
Additional Information
Series: R1EV5801MBRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-SOIC (0.445"", 11.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 5.5V |
| Technology | EEPROM |
| Memory Format | EEPROM |
| Supplier Device Package | 32-SOP |
| Write Cycle Time - Word, Page | 10ms |
| Memory Interface | Parallel |
| Access Time | 150 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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