M3004316035NX0PTBY
IC RAM 4MBIT PAR 54TSOPManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation MRAM (Magnetoresistive RAM) Memory IC, part number M3004316035NX0PTBY. This non-volatile memory component offers a 4Mbit storage capacity with a parallel interface. Featuring a fast 35 ns access time and write cycle time, it is organized as 256K x 16. The device operates within a voltage range of 2.7V to 3.6V and is specified for operation between -40°C and 105°C. It is supplied in a 54-TSOP (0.400", 10.16mm width) surface mount package, delivered in trays. This MRAM technology provides inherent data retention without the need for a battery backup, making it suitable for applications requiring high reliability and instant-on capabilities across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 54-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Format | RAM |
| Supplier Device Package | 54-TSOP |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 256K x 16 |
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