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IDT71V67602S133BQ

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IDT71V67602S133BQ

IC SRAM 9MBIT PARALLEL 165CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation presents the IDT71V67602S133BQ, a 9Mbit synchronous SRAM with a parallel interface. This memory component operates at a clock frequency of 133 MHz, offering an access time of 4.2 ns. The device features a memory organization of 256K x 36 and is packaged in a 165-CABGA (13x15) for surface mounting. Designed for reliable operation within a temperature range of 0°C to 70°C, it requires a supply voltage between 3.135V and 3.465V. This SRAM technology is commonly utilized in networking infrastructure, telecommunications equipment, and high-performance computing applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR
Clock Frequency133 MHz
Memory FormatSRAM
Supplier Device Package165-CABGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time4.2 ns
Memory Organization256K x 36
ProgrammableNot Verified

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