IDT71V65802S133BQ
IC SRAM 9MBIT PARALLEL 165CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V65802S133BQ, a high-performance synchronous SRAM, offers a 9Mbit memory capacity organized as 512K x 18. This device operates at a 133 MHz clock frequency with a quick 4.2 ns access time, utilizing an SDR (ZBT) technology for efficient data transfer. The parallel memory interface is housed in a compact 165-CABGA (13x15) package, designed for surface mounting. With a supply voltage range of 3.135V to 3.465V and an operating temperature of 0°C to 70°C, this SRAM is suitable for demanding applications in networking, telecommunications, and high-speed computing systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.135V ~ 3.465V |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Clock Frequency | 133 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-CABGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 4.2 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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