IDT71V424S10Y8
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation IDT71V424S10Y8 is a 4Mbit asynchronous SRAM device organized as 512K x 8. This parallel memory IC offers a rapid 10 ns access time and a 10 ns write cycle time. The device operates from a 3V to 3.6V supply voltage and is housed in a 36-SOJ (0.400" width) surface-mount package. It is supplied on tape and reel. This component is suitable for applications in the industrial, consumer electronics, and telecommunications sectors requiring high-speed data buffering and storage.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
71V016SA20PHGI
IC SRAM 1MBIT PARALLEL 44TSOP II
IDT71T75602S200PFGI8
IC SRAM 18MBIT PARALLEL 100TQFP
7025L55JI
IC SRAM 128KBIT PARALLEL 84PLCC
