IDT71V416YL12Y8
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416YL12Y8 is a high-speed, asynchronous SRAM memory IC. This component features a 4Mbit memory size organized as 256K x 16, offering a 12 ns access time. The parallel memory interface facilitates efficient data transfer, with a write cycle time also at 12 ns. The device operates from a 3V to 3.6V supply voltage and is housed in a 44-SOJ package, specifically a 44-BSOJ (0.400", 10.16mm width) for surface mounting. This volatile memory is suitable for a range of applications, including telecommunications, industrial control systems, and consumer electronics. The IDT71V416YL12Y8 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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