IDT71V416YL12Y
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416YL12Y is a high-speed, asynchronous SRAM memory IC with a density of 4Mbit. Featuring a parallel interface and organized as 256K x 16, this component offers a rapid access time of 12 ns, crucial for performance-sensitive applications. The device operates within a voltage range of 3V to 3.6V and is housed in a 44-SOJ (0.400" width) surface-mount package, supplied in tubes. Its write cycle time is also rated at 12 ns. This memory solution is well-suited for use in telecommunications, industrial control systems, and consumer electronics where fast data access and reliable volatile memory are paramount.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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