IDT71V416VS15YG8
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416VS15YG8 is an asynchronous SRAM memory component with a density of 4Mbit. This parallel interface device features an access time of 15 ns and a write cycle time of 15 ns. The memory organization is 256K x 16, providing a total of 4,194,304 bits of storage. The device operates over a voltage range of 3V to 3.6V and is housed in a 44-SOJ package, specifically a 44-BSOI with a 0.400" width. It is designed for surface mount applications and operates within an ambient temperature range of 0°C to 70°C. This component is commonly utilized in industrial, telecommunications, and consumer electronics applications requiring high-speed data storage. The IDT71V416VS15YG8 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 15 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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