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IDT71V416VS15YG8

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IDT71V416VS15YG8

IC SRAM 4MBIT PARALLEL 44SOJ

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation IDT71V416VS15YG8 is an asynchronous SRAM memory component with a density of 4Mbit. This parallel interface device features an access time of 15 ns and a write cycle time of 15 ns. The memory organization is 256K x 16, providing a total of 4,194,304 bits of storage. The device operates over a voltage range of 3V to 3.6V and is housed in a 44-SOJ package, specifically a 44-BSOI with a 0.400" width. It is designed for surface mount applications and operates within an ambient temperature range of 0°C to 70°C. This component is commonly utilized in industrial, telecommunications, and consumer electronics applications requiring high-speed data storage. The IDT71V416VS15YG8 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-BSOJ (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package44-SOJ
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time15 ns
Memory Organization256K x 16
ProgrammableNot Verified

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