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IDT71V416VS12PH8

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IDT71V416VS12PH8

IC SRAM 4MBIT PARALLEL 44TSOP II

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation IDT71V416VS12PH8 is a 4Mbit asynchronous SRAM memory integrated circuit. This component offers a parallel interface with an access time of 12 nanoseconds and a write cycle time of 12 nanoseconds. The memory organization is 256K x 16, providing a total of 4 megabits of volatile data storage. It operates within a supply voltage range of 3V to 3.6V and is housed in a 44-TSOP II package suitable for surface mount applications. The operating temperature range for this device is 0°C to 70°C. This memory solution is commonly utilized in applications such as industrial automation, telecommunications infrastructure, and consumer electronics where fast, reliable data buffering is required. The IDT71V416VS12PH8 is supplied on a tape and reel for efficient automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page12ns
Memory InterfaceParallel
Access Time12 ns
Memory Organization256K x 16
ProgrammableNot Verified

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