IDT71V416VS10Y
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416VS10Y is a 4Mbit asynchronous SRAM memory IC with a parallel interface. It offers a fast access time of 10 ns and a word write cycle time of 10 ns, facilitating efficient data throughput. The memory organization is 256K x 16, providing a substantial capacity for data storage applications. This component operates within a supply voltage range of 3V to 3.6V and is packaged in a 44-SOJ (44-BSOJ) surface-mount package. The operating temperature range is 0°C to 70°C. This device is suitable for applications requiring high-speed, non-volatile data buffering and storage, commonly found in industrial control, telecommunications, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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