IDT71V416VL12Y
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation IDT71V416VL12Y is a 4Mbit asynchronous Static Random-Access Memory (SRAM) device. Featuring a parallel interface, this memory component offers a fast access time of 12 ns, suitable for high-speed data buffering and storage applications. The memory organization is 256K x 16, facilitating efficient data handling. Operating within a supply voltage range of 3V to 3.6V, it is designed for reliable performance across a commercial temperature range of 0°C to 70°C. The device is packaged in a 44-SOJ (Small Outline J-lead) format, a surface-mount package, making it ideal for integration into compact electronic designs. This component finds application in various industries including telecommunications, industrial automation, and consumer electronics where rapid, non-volatile data access is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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