IDT71V416S10Y
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416S10Y, a 4Mbit asynchronous SRAM, offers a 10 ns access time for high-speed data operations. This memory component features a parallel interface and a 256K x 16 organization, delivering efficient data throughput. Operating from a 3V to 3.6V supply, the IDT71V416S10Y is suited for applications requiring rapid read and write cycles, with a word/page write cycle time of 10 ns. Its 44-SOJ package (44-BSOJ, 0.400" width) facilitates surface mounting for compact designs. This memory is commonly utilized in industrial automation, telecommunications infrastructure, and advanced computing systems. The component is supplied in tubes for efficient handling during manufacturing processes.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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