IDT71V416S10BEI8
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71V416S10BEI8. This asynchronous SRAM memory IC offers a 4Mbit capacity organized as 256K x 16. Featuring a 10 ns access time and a 3V to 3.6V supply voltage, this component is suitable for demanding applications. The parallel memory interface and 10 ns write cycle time contribute to efficient data handling. Housed in a 48-CABGA (9x9) package, it is designed for surface mounting. This device finds application in industrial, communication, and consumer electronics sectors where reliable high-speed memory is critical. The operating temperature range is -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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