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IDT71V25761YSA200BGI8

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IDT71V25761YSA200BGI8

IC SRAM 4.5MBIT PAR 119PBGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation IDT71V25761YSA200BGI8 is a 4.5Mbit synchronous SRAM device featuring a parallel interface and an access time of 5 ns. Operating at a clock frequency of 200 MHz, this memory component utilizes an SDR technology with a memory organization of 128K x 36. Supplied in a 119-PBGA (14x22) package, it is designed for surface mount applications and operates within a temperature range of -40°C to 85°C. The device requires a supply voltage between 3.135V and 3.465V. This component is commonly employed in networking, telecommunications, and high-performance computing applications where low latency and high throughput are critical. The memory is delivered on tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case119-BGA
Mounting TypeSurface Mount
Memory Size4.5Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR
Clock Frequency200 MHz
Memory FormatSRAM
Supplier Device Package119-PBGA (14x22)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time5 ns
Memory Organization128K x 36
ProgrammableNot Verified

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