IDT71V25761YSA200BG
IC SRAM 4.5MBIT PAR 119PBGAManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation IDT71V25761YSA200BG is a synchronous SRAM memory component with a 4.5Mbit capacity. This device operates with a 200 MHz clock frequency and features a 5 ns access time. The memory organization is 128K x 36, accessed via a parallel interface. Designed for surface mount applications, it is supplied in a 119-PBGA (14x22) package. The operating voltage range is 3.135V to 3.465V, with an operating temperature range of 0°C to 70°C. This component finds application in networking infrastructure, telecommunications equipment, and high-performance computing systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 119-BGA |
| Mounting Type | Surface Mount |
| Memory Size | 4.5Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.135V ~ 3.465V |
| Technology | SRAM - Synchronous, SDR |
| Clock Frequency | 200 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 119-PBGA (14x22) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 5 ns |
| Memory Organization | 128K x 36 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
70T3339S133BF
IC SRAM 9MBIT PARALLEL 208CABGA
70V25L25J
IC SRAM 128KBIT PARALLEL 84PLCC
7134LA55L48B
IC SRAM 32KBIT PARALLEL 48LCC
