IDT71016S20Y8
IC SRAM 1MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation IDT71016S20Y8 is a 1Mbit asynchronous SRAM component designed for parallel access. Featuring a memory organization of 64K x 16, this device offers a fast access time of 20 ns and a word/page write cycle time of 20 ns. It operates within a voltage supply range of 4.5V to 5.5V and is suitable for surface mount applications. The component comes in a 44-SOJ package, specifically a 44-BSOJ (0.400", 10.16mm Width), and is supplied on tape and reel (TR). This volatile memory solution is engineered for performance-critical applications across various industries, including industrial control and telecommunications. The operating temperature range is 0°C to 70°C (TA).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 20ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |