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71V67603S133BQ

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71V67603S133BQ

IC SRAM 9MBIT PARALLEL 165CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 71V67603S133BQ is a 9Mbit synchronous, SDR SRAM memory component. This high-speed device operates at a clock frequency of 133 MHz, offering an access time of 4.2 ns. The memory organization is 256K x 36, presenting a parallel interface. It is housed in a 165-CABGA (13x15) package and supports a supply voltage range of 3.135V to 3.465V. The operating temperature range is 0°C to 70°C. This component is suitable for applications in networking, telecommunications, and high-performance computing.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR
Clock Frequency133 MHz
Memory FormatSRAM
Supplier Device Package165-CABGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time4.2 ns
Memory Organization256K x 36
ProgrammableNot Verified

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