71V65903S80BQ
IC SRAM 9MBIT PARALLEL 165CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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The Renesas Electronics Corporation 71V65903S80BQ is a 9Mbit synchronous SRAM memory component featuring a parallel interface. This device operates at 3.135V to 3.465V with an access time of 8 ns. Its memory organization is 512K x 18, conforming to the SRAM - Synchronous, SDR (ZBT) technology. Supplied in a 165-CABGA (13x15) package for surface mounting, it is rated for an operating temperature range of 0°C to 70°C. This component is suitable for applications in networking, telecommunications, and high-performance computing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-TBGA |
| Mounting Type | Surface Mount |
| Memory Size | 9Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3.135V ~ 3.465V |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Memory Format | SRAM |
| Supplier Device Package | 165-CABGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 8 ns |
| Memory Organization | 512K x 18 |
| Programmable | Not Verified |
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