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71V65803S100BQ

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71V65803S100BQ

IC SRAM 9MBIT PAR 165CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 71V65803S100BQ is a 9-Mbit synchronous SRAM memory component. This device features a parallel interface and operates at a clock frequency of 100 MHz with an access time of 5 ns. The memory organization is 512K x 18, and it utilizes SRAM - Synchronous, SDR (ZBT) technology. The component is housed in a 165-CABGA (13x15) package and supports surface mount installation. Operating within a voltage range of 3.135V to 3.465V, it is suitable for applications requiring high-speed data buffering and storage. This component finds utility in industries such as telecommunications, networking equipment, and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR (ZBT)
Clock Frequency100 MHz
Memory FormatSRAM
Supplier Device Package165-CABGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time5 ns
Memory Organization512K x 18
ProgrammableNot Verified

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