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71V65703S80BQ8

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71V65703S80BQ8

IC SRAM 9MBIT PARALLEL 165CABGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 71V65703S80BQ8 is a 9Mbit synchronous SRAM device featuring a parallel, SDR (ZBT) interface. This memory component offers an 8 ns access time and is organized as 256K x 36. Designed for surface mount applications, it is supplied in a compact 165-CABGA (13x15) package. The operating voltage range is 3.135V to 3.465V, with operation specified for ambient temperatures between 0°C and 70°C. This device is commonly utilized in networking infrastructure, telecommunications equipment, and high-performance computing applications demanding fast, parallel memory access. The 71V65703S80BQ8 is delivered on a tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case165-TBGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR (ZBT)
Memory FormatSRAM
Supplier Device Package165-CABGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time8 ns
Memory Organization256K x 36
ProgrammableNot Verified

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