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71V65703S80BG8

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71V65703S80BG8

IC SRAM 9MBIT PARALLEL 119PBGA

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation's 71V65703S80BG8 is a 9Mbit synchronous SRAM memory component featuring a parallel interface. This device operates with an 8 ns access time and utilizes SDR (ZBT) technology. The memory organization is 256K x 36, and it requires a supply voltage ranging from 3.135V to 3.465V. Packaged in a 119-PBGA (14x22) for surface mounting, it is supplied on tape and reel. The operating temperature range is 0°C to 70°C. This component finds application in networking infrastructure, telecommunications equipment, and high-performance computing systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case119-BGA
Mounting TypeSurface Mount
Memory Size9Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR (ZBT)
Memory FormatSRAM
Supplier Device Package119-PBGA (14x22)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Access Time8 ns
Memory Organization256K x 36
ProgrammableNot Verified

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