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71V424S12YG

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71V424S12YG

IC SRAM 4MBIT PARALLEL 36SOJ

Manufacturer: Renesas Electronics Corporation

Categories: Memory

Quality Control: Learn More

Renesas Electronics Corporation 71V424S12YG is a 4Mbit asynchronous SRAM device featuring a parallel interface. This component offers a rapid 12 ns access time and a 12 ns write cycle time, enabling efficient data handling for demanding applications. With a memory organization of 512K x 8, it provides a compact solution for data storage needs. The 36-SOJ package facilitates surface-mount integration, suitable for high-density board designs. Operating within a voltage range of 3V to 3.6V and an ambient temperature range of 0°C to 70°C, this volatile memory IC is designed for reliable performance in industrial, consumer electronics, and telecommunications sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case36-BSOJ (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package36-SOJ
Write Cycle Time - Word, Page12ns
Memory InterfaceParallel
Access Time12 ns
Memory Organization512K x 8
ProgrammableNot Verified

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