71V424S10YG8
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 71V424S10YG8 is a 4Mbit asynchronous SRAM with a parallel interface. This memory component offers a rapid 10 ns access time and a word/page write cycle time of 10 ns. The memory is organized as 512K x 8, providing a versatile solution for data storage. It operates within a voltage range of 3V to 3.6V and is specified for an industrial operating temperature range of 0°C to 70°C. The component is housed in a 36-SOJ package, suitable for surface mount applications. This device is commonly utilized in telecommunications, industrial automation, and consumer electronics where fast, reliable volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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