71V424S10YG
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V424S10YG is a 4Mbit asynchronous Static Random Access Memory (SRAM) device. This component features a parallel interface with a memory organization of 512K x 8. It offers a fast access time of 10 ns and a write cycle time of 10 ns. The device operates with a supply voltage range of 3V to 3.6V and is designed for surface mounting in a 36-SOJ package (36-BSOJ, 0.400" width). Operating within an ambient temperature range of 0°C to 70°C, this memory IC is suitable for applications in telecommunications, networking, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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