71V424L10YG
IC SRAM 4MBIT PARALLEL 36SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V424L10YG is a high-speed, asynchronous SRAM device with a memory organization of 512K x 8. This 4Mbit parallel memory IC offers a fast access time of 10 ns, making it suitable for demanding applications. The 71V424L10YG is available in a 36-SOJ (36-BSOJ) surface-mount package, facilitating efficient board design. Operating within a voltage range of 3V to 3.6V, this volatile memory component is engineered for reliability in commercial environments, with an operating temperature range of 0°C to 70°C. Its performance characteristics are advantageous in data acquisition, buffering, and embedded systems across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 36-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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