71V416S12YGI
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416S12YGI is a 4Mbit asynchronous SRAM device featuring a parallel interface. This memory IC offers a fast access time of 12 ns and a word write cycle time of 12 ns, ensuring efficient data handling. Its organization is 256K x 16, providing ample space for data storage. The device operates within a voltage range of 3V to 3.6V and is designed for surface mounting. Packaged in a 44-SOJ (44-BSOJ) format, it is suitable for applications requiring high-speed data buffering and storage. This component is commonly utilized in industrial automation, networking equipment, and consumer electronics where reliable and rapid memory access is critical. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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