71V416S12YG
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation 71V416S12YG is a 4Mbit asynchronous SRAM memory IC. This component features a parallel interface and a memory organization of 256K x 16. With an access time of 12 ns and a write cycle time of 12 ns, it is suitable for applications requiring rapid data access. The device operates within a voltage range of 3V to 3.6V and has a standard operating temperature range of 0°C to 70°C. Supplied in a 44-SOJ package, designed for surface mounting, this SRAM is utilized in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
71V016SA20PHGI
IC SRAM 1MBIT PARALLEL 44TSOP II
IDT71T75602S200PFGI8
IC SRAM 18MBIT PARALLEL 100TQFP
7025L55JI
IC SRAM 128KBIT PARALLEL 84PLCC
