71V416S12BEI
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416S12BEI is a 4Mbit asynchronous SRAM memory integrated circuit. This component features a parallel memory interface with a memory organization of 256K x 16, providing a 12 ns access time. The device operates with a supply voltage range of 3V to 3.6V and is packaged in a 48-CABGA (9x9) surface-mount configuration. It offers a write cycle time of 12 ns, supporting applications requiring high-speed data storage and retrieval. The 71V416S12BEI is suitable for use in industrial, automotive, and communication systems where reliable and fast memory is critical. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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