71V416S12BEG
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation's 71V416S12BEG is a high-speed, asynchronous SRAM featuring 4Mbit of memory organized as 256K x 16. This component offers a rapid 12 ns access time, crucial for demanding applications. It utilizes a parallel memory interface and is housed in a compact 48-CABGA (9x9) package suitable for surface mounting. Operating within a voltage range of 3V to 3.6V, the 71V416S12BEG is designed for applications requiring fast data retrieval and storage. Typical industries leveraging this type of memory include data communication, industrial automation, and embedded systems. The device operates reliably within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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