71V416S12BE
IC SRAM 4MBIT PARALLEL 48CABGAManufacturer: Renesas Electronics Corporation
Categories: Memory
Quality Control: Learn More
Renesas Electronics Corporation 71V416S12BE, a 4Mbit Asynchronous SRAM, offers a 12 ns access time and operates from a 3V to 3.6V supply. This memory component features a parallel interface and is organized as 256K x 16. The 71V416S12BE is housed in a 48-CABGA (9x9) package, designed for surface mounting. Its 12ns write cycle time further enhances its performance profile. This device is suitable for applications across various industries, including telecommunications, industrial automation, and consumer electronics where reliable, high-speed data storage is critical. The component operates within a temperature range of 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-CABGA (9x9) |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 12 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
71V016SA20PHGI
IC SRAM 1MBIT PARALLEL 44TSOP II
IDT71T75602S200PFGI8
IC SRAM 18MBIT PARALLEL 100TQFP
7025L55JI
IC SRAM 128KBIT PARALLEL 84PLCC
