71V416S10YG8
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416S10YG8 is a 4Mbit asynchronous SRAM memory component. This device features a parallel interface and a memory organization of 256K x 16. With an access time of 10 ns, it is suitable for applications requiring high-speed data retrieval. The 71V416S10YG8 operates within a voltage range of 3V to 3.6V. It is supplied in a 44-SOJ package, designed for surface mounting and delivered on tape and reel. This component finds application in various industrial sectors, including telecommunications and consumer electronics, where reliable and fast volatile memory is critical. The write cycle time for a word or page is also rated at 10 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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