71V416S10YG
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Renesas Electronics Corporation
Categories: Memory
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Renesas Electronics Corporation 71V416S10YG is a 4Mbit asynchronous SRAM device featuring a parallel interface. This memory IC offers a fast access time of 10 ns and a write cycle time of 10 ns, facilitating high-speed data operations. The memory organization is 256K x 16, and it operates from a supply voltage range of 3V to 3.6V. Packaged in a 44-SOJ (44-BSOJ, 0.400" width), this surface-mount component is designed for applications requiring robust memory solutions. The operating temperature range is 0°C to 70°C. This memory component is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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